Optical Properties of Wide Bandgap Nitride Semiconductor Heterostructures Grown by MBE
Annual meeting; 9th, IEEE: Lasers and Electro-Optics Society; LEOS '96 ; 1996 ; Boston; MA
01.01.1996
256 pages
Described as proceedings. IEEE cat no: 96CH35895
Aufsatz (Konferenz)
Englisch
LEOS , lasers , IEEE , electro-optics
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Wide Bandgap Semiconductor Light Emitters
British Library Online Contents | 1997
|Contacts for Wide Bandgap Semiconductor Materials
British Library Conference Proceedings | 1997
|Material Design of Wide Bandgap III-V Nitride Alloys
British Library Conference Proceedings | 1994
|Wide-bandgap semiconductor devices for automobile applications
Tema Archiv | 2006
|