This paper evaluates the feasibility of wide-bandgap semiconductors as a replacement for silicon semiconductors, applied in a full bridge resonant converter for EV and HEV magnetically coupled resonant wireless power transfer, as a way to increase the efficiency of the process. The work consists of a series of simulations to study the impact of different input voltages, switching frequencies, and output load values on the overall efficiency of the system, for three distinct semiconductor technologies: Si MOSFET, GaN transistor, and SiC MOSFET.


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    Title :

    Wide Bandgap Semiconductor-Based Converters for EV and HEV Magnetically Coupled Resonant Wireless Power Transfer


    Contributors:


    Publication date :

    2021-05-05


    Size :

    902504 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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