This paper evaluates the feasibility of wide-bandgap semiconductors as a replacement for silicon semiconductors, applied in a full bridge resonant converter for EV and HEV magnetically coupled resonant wireless power transfer, as a way to increase the efficiency of the process. The work consists of a series of simulations to study the impact of different input voltages, switching frequencies, and output load values on the overall efficiency of the system, for three distinct semiconductor technologies: Si MOSFET, GaN transistor, and SiC MOSFET.
Wide Bandgap Semiconductor-Based Converters for EV and HEV Magnetically Coupled Resonant Wireless Power Transfer
05.05.2021
902504 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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