The invention relates to the field of semiconductor materials, in particular to a novel silicon carbide-based wide bandgap semiconductor power device, which is innovated aiming at the problems of high defect density, poor process compatibility and the like of the existing silicon carbide device. According to the invention, material growth, device structure, manufacturing process, performance regulation and control and application multi-dimensional attack is realized, PVT and LPE methods are improved to improve crystal quality, the structure is optimized to reduce electric leakage, high-voltage application is adapted, the process is innovated to improve efficiency and yield, a composite system is expanded, and intelligent planning is integrated. The product has wide application prospects in multiple fields, and the comprehensive performance is remarkably improved.
本发明为半导体材料领域,具体涉及新型碳化硅基宽禁带半导体功率器件,针对现存碳化硅器件缺陷密度高、工艺兼容性差等难题展开创新。从材料生长、器件结构、制造工艺、性能调控及应用多维度攻坚,改良PVT与LPE法提升晶体质量,优化结构减少漏电、适配高压应用,创新工艺提效率与良品率,还拓展复合体系、融入智能规划。产品在多领域应用前景广阔,综合性能显著提升。
Novel silicon carbide-based wide bandgap semiconductor power device
一种新型碳化硅基宽禁带半导体功率器件
27.05.2025
Patent
Elektronische Ressource
Chinesisch
IPC: | C30B SINGLE-CRYSTAL GROWTH , Züchten von Einkristallen / H02J CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER , Schaltungsanordnungen oder Systeme für die Abgabe oder Verteilung elektrischer Leistung / B60L PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES , Antrieb von elektrisch angetriebenen Fahrzeugen / H10D |
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