We have developed a halogen free inductively coupled plasma fast dry etch for InGaN/ AlGaN based LED and laser structures. The absence of any toxic source gases make the process much simpler to implement.


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    Title :

    Halogen free dry etching of InGaN/AlGaN optoelectronic device structures


    Contributors:
    Sale, T.E. (author) / Ahmed, S. (author) / Lancefield, D. (author)


    Publication date :

    2005-01-01


    Size :

    127679 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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