We have developed a halogen free inductively coupled plasma fast dry etch for InGaN/ AlGaN based LED and laser structures. The absence of any toxic source gases make the process much simpler to implement.
Halogen free dry etching of InGaN/AlGaN optoelectronic device structures
01.01.2005
127679 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Halogen Free Dry Etching of InGaN/AlGaN Optoelectronic Device Structures
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