High-speed etching of single-crystal 6H-SiC by femtosecond Ti:sapphire laser ablation was demonstrated. Fine line pattern of 60 /spl mu/m in depth was fabricated with relatively smooth etched surface with little damage.


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    Title :

    Micromachining of SiC by femtosecond laser ablation


    Contributors:
    Aoki, N. (author) / Sugioka, K. (author) / Obata, K. (author) / Akane, T. (author) / Takahashi, T. (author) / Cho, S.H. (author) / Kumagai, H. (author) / Toyoda, K. (author) / Midorikawa, K. (author)


    Publication date :

    2001-01-01


    Size :

    147119 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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