High-speed etching of single-crystal 6H-SiC by femtosecond Ti:sapphire laser ablation was demonstrated. Fine line pattern of 60 /spl mu/m in depth was fabricated with relatively smooth etched surface with little damage.
Micromachining of SiC by femtosecond laser ablation
01.01.2001
147119 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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