We describe a numerically efficient semiconductor model for FDTD simulation of optoelectronic and photonic devices that include the essential carrier dynamics such as band filling with Fermi-Dirac thermalization, spectral hole burning, and refractive index change.


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    Title :

    A numerically efficient semiconductor model with Fermi-Dirac thermalization dynamics (band-filling) for FDTD simulation of optoelectronic and photonic devices


    Contributors:
    Huang, Y. (author) / Ho, S.T. (author)


    Publication date :

    2005-01-01


    Size :

    682383 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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