We describe a numerically efficient semiconductor model for FDTD simulation of optoelectronic and photonic devices that include the essential carrier dynamics such as band filling with Fermi-Dirac thermalization, spectral hole burning, and refractive index change.
A numerically efficient semiconductor model with Fermi-Dirac thermalization dynamics (band-filling) for FDTD simulation of optoelectronic and photonic devices
2005 Quantum Electronics and Laser Science Conference ; 1 ; 253-255 Vol. 1
2005-01-01
682383 byte
Conference paper
Electronic Resource
English
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