We describe a numerically efficient semiconductor model for FDTD simulation of optoelectronic and photonic devices that include the essential carrier dynamics such as band filling with Fermi-Dirac thermalization, spectral hole burning, and refractive index change.
A numerically efficient semiconductor model with Fermi-Dirac thermalization dynamics (band-filling) for FDTD simulation of optoelectronic and photonic devices
2005 Quantum Electronics and Laser Science Conference ; 1 ; 253-255 Vol. 1
01.01.2005
682383 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Photonic Crystal based Optoelectronic Devices
British Library Conference Proceedings | 2004
|Photonic crystal based optoelectronic devices
IEEE | 2004
|Photonic Band Structures for Optoelectronic Applications
British Library Conference Proceedings | 1993
|Dynamical semiconductor medium FDTD simulation of current-injection nanophotonic devices
British Library Online Contents | 2008
|