We describe a numerically efficient semiconductor model for FDTD simulation of optoelectronic and photonic devices that include the essential carrier dynamics such as band filling with Fermi-Dirac thermalization, spectral hole burning, and refractive index change.


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    Titel :

    A numerically efficient semiconductor model with Fermi-Dirac thermalization dynamics (band-filling) for FDTD simulation of optoelectronic and photonic devices


    Beteiligte:
    Huang, Y. (Autor:in) / Ho, S.T. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    682383 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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