We successfully fabricated high-performance oxide-confined red VCSELs. A low threshold current of 0.5 mA and an extremely high maximum CW lasing temperature of 75C were achieved with a room-temperature lasing wavelength of 666 nm. This low-threshold and high-temperature operation was realized, because the oxide-confined structure is advantageous for making smaller devices, compared to the proton-implanted structure.


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    Title :

    High-temperature operation and thermal analysis of InGaAlP-based oxide-confined red VCSELs


    Contributors:
    Takaoka, K. (author) / Ezaki, M. (author) / Nishigaki, M. (author) / Hatakoshi, G. (author)


    Publication date :

    2002-01-01


    Size :

    121576 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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