The reliability of oxide confined 850 nm VCSELs for 10 Gb/s operation was investigated. The median life with criteria of 2 dB decrease of output power at environmental temperature of 25/spl deg/C was over 10 million hours.
Reliability of oxide confined 850 nm VCSELs for high speed interconnection systems
2003-01-01
75501 byte
Conference paper
Electronic Resource
English
Reliability of oxide confined 850 nm VCSELs for high speed interconnection systems
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