The reliability of oxide confined 850 nm VCSELs for 10 Gb/s operation was investigated. The median life with criteria of 2 dB decrease of output power at environmental temperature of 25/spl deg/C was over 10 million hours.
Reliability of oxide confined 850 nm VCSELs for high speed interconnection systems
01.01.2003
75501 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Reliability of oxide confined 850 nm VCSELs for high speed interconnection systems
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