The reliability of oxide confined 850 nm VCSELs for 10 Gb/s operation was investigated. The median life with criteria of 2 dB decrease of output power at environmental temperature of 25/spl deg/C was over 10 million hours.


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    Titel :

    Reliability of oxide confined 850 nm VCSELs for high speed interconnection systems


    Beteiligte:
    Sato, T. (Autor:in) / Iwai, N. (Autor:in) / Haga, Y. (Autor:in) / Ariga, M. (Autor:in) / Hama, T. (Autor:in) / Shimizu, H. (Autor:in) / Kasukawa, A. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    75501 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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