Summary form only given. An Emcore D 180 metalorganic chemical vapor deposition (MOCVD) system was used to develop 1.3 micron InGaAsN/GaAs vertical cavity surface emitting lasers (VCSELs). The InGaAsN VCSELs are dry etched to form a 42 micron mesa that is subsequently wet oxidized to form apertures ranging from 6.0 to 8.5 microns. The quasi-single mode laser was modulated with a pseudorandom bit sequence at 2.5 Gbit/sec at room temperature.


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    Titel :

    1.3 micron InGaAsN oxide-confined VCSELs grown by MOCVD


    Beteiligte:
    Murray, C.S. (Autor:in) / Newman, F.D. (Autor:in) / Shangzhu Sun, (Autor:in) / Clevenger, J.B. (Autor:in) / Bossert, D.J. (Autor:in) / Wang, C.X. (Autor:in) / Hou, H.Q. (Autor:in) / Stall, R. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    135452 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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