Summary form only given. An Emcore D 180 metalorganic chemical vapor deposition (MOCVD) system was used to develop 1.3 micron InGaAsN/GaAs vertical cavity surface emitting lasers (VCSELs). The InGaAsN VCSELs are dry etched to form a 42 micron mesa that is subsequently wet oxidized to form apertures ranging from 6.0 to 8.5 microns. The quasi-single mode laser was modulated with a pseudorandom bit sequence at 2.5 Gbit/sec at room temperature.
1.3 micron InGaAsN oxide-confined VCSELs grown by MOCVD
2002-01-01
135452 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
High-performance 1.3-micron InGaAsN VCSELs
IEEE | 2001
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British Library Conference Proceedings | 2001
|MOCVD Growth of InGaAsN QWs and 1.3 mum VCSELs
British Library Conference Proceedings | 2003
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