We successfully fabricated high-performance oxide-confined red VCSELs. A low threshold current of 0.5 mA and an extremely high maximum CW lasing temperature of 75C were achieved with a room-temperature lasing wavelength of 666 nm. This low-threshold and high-temperature operation was realized, because the oxide-confined structure is advantageous for making smaller devices, compared to the proton-implanted structure.


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    Titel :

    High-temperature operation and thermal analysis of InGaAlP-based oxide-confined red VCSELs


    Beteiligte:
    Takaoka, K. (Autor:in) / Ezaki, M. (Autor:in) / Nishigaki, M. (Autor:in) / Hatakoshi, G. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    121576 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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