The development of GaAs pseudomorphic HEMTs (PHEMTs) at W-band without using electron beam direct writing is described and the obtained results are reported. The maximum oscillation frequency for the developed device is over 150 GHz. This is the first GaAs PHEMT at W-band fabricated by the conventional UV photolithographic technique.
Development of GaAs pseudomorphic HEMTs at W-band
1996-01-01
207137 byte
Conference paper
Electronic Resource
English
Development of GaAs Pseudomorphic HEMTs at W-Bnd
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