The development of GaAs pseudomorphic HEMTs (PHEMTs) at W-band without using electron beam direct writing is described and the obtained results are reported. The maximum oscillation frequency for the developed device is over 150 GHz. This is the first GaAs PHEMT at W-band fabricated by the conventional UV photolithographic technique.


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    Title :

    Development of GaAs pseudomorphic HEMTs at W-band


    Contributors:
    Zhu Guoliang (author) / Yuan Mingwen (author) / Liu Chenhui (author) / Qiu Wei (author) / Nie Huijun (author)


    Publication date :

    1996-01-01


    Size :

    207137 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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