The development of GaAs pseudomorphic HEMTs (PHEMTs) at W-band without using electron beam direct writing is described and the obtained results are reported. The maximum oscillation frequency for the developed device is over 150 GHz. This is the first GaAs PHEMT at W-band fabricated by the conventional UV photolithographic technique.
Development of GaAs pseudomorphic HEMTs at W-band
01.01.1996
207137 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Development of GaAs Pseudomorphic HEMTs at W-Bnd
British Library Conference Proceedings | 1996
|Quasi-Monolithic Ka-Band VCOs Using Pseudomorphic AlGaAs/InGaAs/GaAs HEMTs
British Library Conference Proceedings | 1996
|W-band monolithic pseudomorphic AlGaAs/InGaAs/GaAs HEMT CBCPW LNA
Tema Archiv | 1993
|2DEG channel-dependent model for Hg~1~-~xCd~xTe-based pseudomorphic HEMTs [4042-03]
British Library Conference Proceedings | 2000
|