The development of GaAs pseudomorphic HEMTs (PHEMTs) at W-band without using electron beam direct writing is described and the obtained results are reported. The maximum oscillation frequency for the developed device is over 150 GHz. This is the first GaAs PHEMT at W-band fabricated by the conventional UV photolithographic technique.


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    Titel :

    Development of GaAs pseudomorphic HEMTs at W-band


    Beteiligte:
    Zhu Guoliang (Autor:in) / Yuan Mingwen (Autor:in) / Liu Chenhui (Autor:in) / Qiu Wei (Autor:in) / Nie Huijun (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    207137 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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