Quasi-monolithic Ka-band voltage control oscillators (VCOs) have been developed based on 0.2 /spl mu/m pseudomorphic AlGaAs/InGaAs/GaAs low noise HEMT technology. The designed VCO incorporates a PM HEMT, a Schottky diode, matching network and bias circuit. An output power of 10 mW at 26 GHz was obtained. A frequency of 26.86 GHz with 340 MHz of tuning bandwidth and 37 GHz with 160 MHz of tuning bandwidth have been measured. The chip size is 2.5 mm/spl times/3.5 mm. This is the first report of a quasi-monolithic Ka-band VCOs using pseudomorphic AlGaAs/InGaAs/GaAs HEMTs in China.


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    Titel :

    Quasi-monolithic Ka-band VCOs using pseudomorphic AlGaAs/InGaAs/GaAs HEMTs


    Beteiligte:
    Wang Maosen (Autor:in) / Niu Lirong (Autor:in) / Yu Shuyong (Autor:in) / Liu Jun (Autor:in) / Yao Dongjin (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    344876 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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