We propose waveguide structures for ultrafast optical devices utilizing intersubband absorption in GaN-based multiple quantum wells grown with metalorganic vapor phase epitaxy. The proposed structure can efficiently enhance absorption in the GaN/AlN MQW structure suitable for device fabrication.


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    Title :

    Waveguide structure for ultrafast photonic devices utilizing intersubband absorption in GaN-based MOVPE-grown multiple quantum wells


    Contributors:
    Kumtornkittikul, C. (author) / Waki, I. (author) / Ning Li, (author) / Otani, H. (author) / Sugiyama, M. (author) / Nakano, Y. (author)


    Publication date :

    2004-01-01


    Size :

    121371 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Waveguide Structure for Ultrafast Photonic Devices Utilizing Intersubband Absorption in GaN-based MOVPE-grown Multiple Quantum Wells

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004




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