We propose waveguide structures for ultrafast optical devices utilizing intersubband absorption in GaN-based multiple quantum wells grown with metalorganic vapor phase epitaxy. The proposed structure can efficiently enhance absorption in the GaN/AlN MQW structure suitable for device fabrication.


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    Titel :

    Waveguide structure for ultrafast photonic devices utilizing intersubband absorption in GaN-based MOVPE-grown multiple quantum wells


    Beteiligte:
    Kumtornkittikul, C. (Autor:in) / Waki, I. (Autor:in) / Ning Li, (Autor:in) / Otani, H. (Autor:in) / Sugiyama, M. (Autor:in) / Nakano, Y. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    121371 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Waveguide Structure for Ultrafast Photonic Devices Utilizing Intersubband Absorption in GaN-based MOVPE-grown Multiple Quantum Wells

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004




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    Fan, W.J. / Sun, L. / Yoon, S.F. et al. | IEEE | 2002


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    Fan, W. J. / Sun, L. / Yoon, S. F. et al. | British Library Conference Proceedings | 2002