We demonstrate the first intersubband absorption at 1.55 /spl mu/m in MOVPE-grown AIN/GaN MQW structures. The absorption linewidth is 45 meV, the narrowest ever reported for 1.55-/spl mu/m intersubband absorption in nitride based MQWs.


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    Titel :

    First observation of 1.55 /spl mu/m intersubband absorption in MOVPE-grown AIN/GaN multiple quantum wells


    Beteiligte:
    Kumtornkittikul, C. (Autor:in) / Waki, I. (Autor:in) / Shikogaki, Y. (Autor:in) / Nakano, Y. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    142706 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch





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