We demonstrate the first intersubband absorption at 1.55 /spl mu/m in MOVPE-grown AIN/GaN MQW structures. The absorption linewidth is 45 meV, the narrowest ever reported for 1.55-/spl mu/m intersubband absorption in nitride based MQWs.


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    Title :

    First observation of 1.55 /spl mu/m intersubband absorption in MOVPE-grown AIN/GaN multiple quantum wells


    Contributors:
    Kumtornkittikul, C. (author) / Waki, I. (author) / Shikogaki, Y. (author) / Nakano, Y. (author)


    Publication date :

    2003-01-01


    Size :

    142706 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English





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