We demonstrate the first intersubband absorption at 1.55 /spl mu/m in MOVPE-grown AIN/GaN MQW structures. The absorption linewidth is 45 meV, the narrowest ever reported for 1.55-/spl mu/m intersubband absorption in nitride based MQWs.
First observation of 1.55 /spl mu/m intersubband absorption in MOVPE-grown AIN/GaN multiple quantum wells
2003-01-01
142706 byte
Conference paper
Electronic Resource
English
First Observation of 1.55 mum Intersubband Absorption in MOVPE-grown AIN/GaN Multiple Quantum Wells
British Library Conference Proceedings | 2003
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