The metamorphic growth of InP on GaAs induces high density of the dislocations near GaAs/InP interface . In this study, it is demonstrated that the lattice-mismatch induced imperfections can be used to tailor the device properties. Particularly, the growth imperfections in semiconductor saturable absorber mirror (SESAM) is investigated as a mechanism for decreasing the recovery time of the absorption.


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    Title :

    Metamorphic growth of long-wavelength saturable absorber on GaAs substrates


    Contributors:
    Vainionpaa, A. (author) / Suomalainen, S. (author) / Tengvall, O. (author) / Hakulinen, T. (author) / Herda, R. (author) / Karirinne, S. (author) / Guina, M. (author) / Okhotnikov, O.G. (author)


    Publication date :

    2005-01-01


    Size :

    286153 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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