The metamorphic growth of InP on GaAs induces high density of the dislocations near GaAs/InP interface . In this study, it is demonstrated that the lattice-mismatch induced imperfections can be used to tailor the device properties. Particularly, the growth imperfections in semiconductor saturable absorber mirror (SESAM) is investigated as a mechanism for decreasing the recovery time of the absorption.
Metamorphic growth of long-wavelength saturable absorber on GaAs substrates
2005-01-01
286153 byte
Conference paper
Electronic Resource
English
Metamorphic Growth of Long-Wavelength Saturable Absorber on GaAs Substrates
British Library Conference Proceedings | 2005
|Long-Wavelength Metamorphic InGaAs Detectors on GaAs Substrates
British Library Conference Proceedings | 2003
|Long Wavelength VCSEL with Tunnel Junction and Metamorphic AIAs/GaAs Conductive DBR
British Library Conference Proceedings | 1999
|