Presents a novel VCSEL design which is monolithic, planar and combines the advantages of AlAs/GaAs DBRs and InP based active layers. The structure consists basically in the use of an active cavity sandwiched between two n doped semiconductor reflectors. A reverse biased n/sup ++//p/sup ++/ tunnel junction is used for the hole injection in the p region of the gain medium. The top mirror is based on GaAs/AlAs metamorphic layers directly grown on the InP active cavity in a 2" compatible process. Current localization is achieved thanks to a simple proton implantation step that destroys locally the electrical conduction in the tunnel junction. Thermal, electrical and optical properties of n type binary GaAs/AlAs mirrors are therefore fully exploited in this simple design.


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    Title :

    Long wavelength VCSEL with tunnel junction and metamorphic AlAs/GaAs conductive DBR


    Contributors:
    Starck, C. (author)


    Publication date :

    1999-01-01


    Size :

    167062 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English





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