Summary form only given. Recently, high power monolithic VCSELs (1 mW at 1.55 um) have been demonstrated by using tunnel junction injection and a metamorphic AlAs/GaAs mirror. This approach combined with a planar process based on proton implantation might enable the ultra low cost fabrication of 1.55 /spl mu/m laser sources. In the paper we present the optimization of the electrical conductivity of AlAs/GaAs n type metamorphic mirrors and analyze their thermal properties.


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    Title :

    1 mW CW RT 1.55 /spl mu/m tunnel VCSEL: thermal and electrical characteristics of GaAs/AlAs metamorphic mirrors


    Contributors:
    Starck, C. (author) / Boucart, J. (author) / Plais, A. (author) / Derouin, E. (author) / Pinquier, A. (author) / Gaborit, F. (author) / Bonnet-Gamard, J. (author) / Fortin, C. (author) / Goldstein, L. (author) / Brillouet, F. (author)


    Publication date :

    1999-01-01


    Size :

    259807 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English