The metamorphic growth of InP on GaAs induces high density of the dislocations near GaAs/InP interface . In this study, it is demonstrated that the lattice-mismatch induced imperfections can be used to tailor the device properties. Particularly, the growth imperfections in semiconductor saturable absorber mirror (SESAM) is investigated as a mechanism for decreasing the recovery time of the absorption.
Metamorphic growth of long-wavelength saturable absorber on GaAs substrates
01.01.2005
286153 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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