The metamorphic growth of InP on GaAs induces high density of the dislocations near GaAs/InP interface . In this study, it is demonstrated that the lattice-mismatch induced imperfections can be used to tailor the device properties. Particularly, the growth imperfections in semiconductor saturable absorber mirror (SESAM) is investigated as a mechanism for decreasing the recovery time of the absorption.


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    Titel :

    Metamorphic growth of long-wavelength saturable absorber on GaAs substrates


    Beteiligte:
    Vainionpaa, A. (Autor:in) / Suomalainen, S. (Autor:in) / Tengvall, O. (Autor:in) / Hakulinen, T. (Autor:in) / Herda, R. (Autor:in) / Karirinne, S. (Autor:in) / Guina, M. (Autor:in) / Okhotnikov, O.G. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    286153 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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