In this paper we present the properties of metamorphic materials, fabrication process of photodiodes, and device results on long-wavelength InGaAs photodetectors with low leakage current and large bandwidth.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Long-wavelength metamorphic InGaAs detectors on GaAs substrates


    Beteiligte:
    Adesida, I. (Autor:in) / Jang, J.H. (Autor:in) / Bae, J.W. (Autor:in) / Kim, S. (Autor:in) / Hoke, W.E. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    143736 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Long-Wavelength Metamorphic InGaAs Detectors on GaAs Substrates

    IEEE | British Library Conference Proceedings | 2003


    Metamorphic growth of long-wavelength saturable absorber on GaAs substrates

    Vainionpaa, A. / Suomalainen, S. / Tengvall, O. et al. | IEEE | 2005


    Metamorphic Growth of Long-Wavelength Saturable Absorber on GaAs Substrates

    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005


    Study and development of Long Wavelength InGaAs Detectors : final report

    Nansen Environmental and Remote Sensing Center / European Space Agency | SLUB | 1997