A kinetic model has been developed to study the effect of nitrogen on indium segregation for GaInNAs/GaAs quantum wells. Our results suggest that nitrogen tends to enhance the indium-gallium exchange process. The incorporation of nitrogen is found to increases the segregation length up to a maximum value, which decreases with further increase in nitrogen concentration.


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    Title :

    Effect of Nitrogen on Indium Segregation in GaInNAs/GaAs Quantum Wells


    Contributors:
    Dixit, V. (author) / Liu, H. F. (author) / Xiang, N. (author)


    Publication date :

    2008-12-01


    Size :

    187523 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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