A kinetic model has been developed to study the effect of nitrogen on indium segregation for GaInNAs/GaAs quantum wells. Our results suggest that nitrogen tends to enhance the indium-gallium exchange process. The incorporation of nitrogen is found to increases the segregation length up to a maximum value, which decreases with further increase in nitrogen concentration.


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    Titel :

    Effect of Nitrogen on Indium Segregation in GaInNAs/GaAs Quantum Wells


    Beteiligte:
    Dixit, V. (Autor:in) / Liu, H. F. (Autor:in) / Xiang, N. (Autor:in)


    Erscheinungsdatum :

    01.12.2008


    Format / Umfang :

    187523 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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