The development of the monolithic integration of AlGaN/GaN FETs with LiNbO/sub 3/ structures for optical signal processing is presented. Wc also present new III-nitride material growth details and electronic device performance.
Monolithic integration of electronic and electro-optical devices exploiting the AlGaN/GaN-LiNbO/sub 3/ material system
(CLEO). Conference on Lasers and Electro-Optics, 2005. ; 3 ; 1605-1607 Vol. 3
2005-01-01
1559495 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 2005
|Monolithic Integration of GaN Electronic Amplifiers with LiNbO~3 Optical Modulators
British Library Conference Proceedings | 2003
|Monolithic Integration of AlGaN/GaN-LiNbO3 Optical-Electronic Structures
British Library Conference Proceedings | 2004
|