The development of the monolithic integration of AlGaN/GaN FETs with LiNbO/sub 3/ structures for optical signal processing is presented. Wc also present new III-nitride material growth details and electronic device performance.


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    Title :

    Monolithic integration of electronic and electro-optical devices exploiting the AlGaN/GaN-LiNbO/sub 3/ material system


    Contributors:


    Publication date :

    2005-01-01


    Size :

    1559495 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




    Monolithic integration of AlGaN/GaN-LiNbO/sub 3/ optical-electronic-structures

    Madison, S.M. / Henderson, W. / Namkoong, G. et al. | IEEE | 2004



    Monolithic Integration of AlGaN/GaN-LiNbO3 Optical-Electronic Structures

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004