We present an innovative technology directed at monolithic integration of GaN electronic devices with lithium niobate (LiNbO/sub 3/) waveguides. GaN FETs have been fabricated for use in systems occupying complete phase and amplitude control and measurement capabilities.
Monolithic integration of AlGaN/GaN-LiNbO/sub 3/ optical-electronic-structures
2004-01-01
130843 byte
Conference paper
Electronic Resource
English
Monolithic Integration of AlGaN/GaN-LiNbO3 Optical-Electronic Structures
British Library Conference Proceedings | 2004
|Monolithic Integration of GaN Electronic Amplifiers with LiNbO~3 Optical Modulators
British Library Conference Proceedings | 2003
|British Library Conference Proceedings | 2005
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