We present an innovative technology directed at monolithic integration of GaN electronic devices with lithium niobate (LiNbO/sub 3/) waveguides. GaN FETs have been fabricated for use in systems occupying complete phase and amplitude control and measurement capabilities.


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    Title :

    Monolithic integration of AlGaN/GaN-LiNbO/sub 3/ optical-electronic-structures


    Contributors:
    Madison, S.M. (author) / Henderson, W. (author) / Namkoong, G. (author) / Patel, K.M. (author) / Doolittle, A. (author) / Ralph, S.E. (author)


    Publication date :

    2004-01-01


    Size :

    130843 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Monolithic Integration of AlGaN/GaN-LiNbO3 Optical-Electronic Structures

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004