We present an innovative technology directed at monolithic integration of GaN electronic devices with lithium niobate (LiNbO/sub 3/) waveguides. GaN FETs have been fabricated for use in systems occupying complete phase and amplitude control and measurement capabilities.
Monolithic integration of AlGaN/GaN-LiNbO/sub 3/ optical-electronic-structures
01.01.2004
130843 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Monolithic Integration of AlGaN/GaN-LiNbO3 Optical-Electronic Structures
British Library Conference Proceedings | 2004
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