We investigate InGaAs-GaAs MQW structure. It has a resonant transition at near 1 /spl mu/m, which is a spectral region that is especially useful for biomedical measurements. Since the resonance is a little less than the band gap energy of GaAs substrate, we do not have to remove the substrate, which significantly simplifies the fabrication process.


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    Title :

    Resonant photorefractive effect at near infrared in InGaAs-GaAs multiple quantum well structure


    Contributors:
    Iwamoto, S. (author) / Matoba, O. (author) / Shimura, T. (author) / Kuroda, K. (author)


    Publication date :

    1998-01-01


    Size :

    142914 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Resonant Photorefractive Effect at Near Infrared in InGaAs/GaAs Multiple Quantum Well Structure

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998



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