We investigate InGaAs-GaAs MQW structure. It has a resonant transition at near 1 /spl mu/m, which is a spectral region that is especially useful for biomedical measurements. Since the resonance is a little less than the band gap energy of GaAs substrate, we do not have to remove the substrate, which significantly simplifies the fabrication process.
Resonant photorefractive effect at near infrared in InGaAs-GaAs multiple quantum well structure
1998-01-01
142914 byte
Conference paper
Electronic Resource
English
Resonant Photorefractive Effect at Near Infrared in InGaAs/GaAs Multiple Quantum Well Structure
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