We demonstrated an InGaAs-GaAs photorefractive MQW device with quantum confined Stark effect (QCSE) for the first time. The maximum diffraction efficiency is 2x10/sup -4/. This value is 100 times smaller than the expected one. This disagreement indicates the effect of the lateral transport.


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    Title :

    InGaAs/GaAs photorefractive quantum well device with quantum confined Stark effect


    Contributors:
    Kageshima, H. (author) / Iwamoto, S. (author) / Nishioka, M. (author) / Someya, T. (author) / Miyazaki, H. (author) / Fukutani, K. (author) / Arakawa, Y. (author) / Yasui, I. (author) / Shimura, T. (author) / Kuroda, K. (author)


    Publication date :

    1999-01-01


    Size :

    144791 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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