We demonstrated an InGaAs-GaAs photorefractive MQW device with quantum confined Stark effect (QCSE) for the first time. The maximum diffraction efficiency is 2x10/sup -4/. This value is 100 times smaller than the expected one. This disagreement indicates the effect of the lateral transport.
InGaAs/GaAs photorefractive quantum well device with quantum confined Stark effect
01.01.1999
144791 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
InGaAs/GaAs photorefractive quantum well device with quantum confined Stark effect
British Library Conference Proceedings | 1999
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British Library Conference Proceedings | 1998
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