We demonstrated an InGaAs-GaAs photorefractive MQW device with quantum confined Stark effect (QCSE) for the first time. The maximum diffraction efficiency is 2x10/sup -4/. This value is 100 times smaller than the expected one. This disagreement indicates the effect of the lateral transport.


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    Titel :

    InGaAs/GaAs photorefractive quantum well device with quantum confined Stark effect


    Beteiligte:
    Kageshima, H. (Autor:in) / Iwamoto, S. (Autor:in) / Nishioka, M. (Autor:in) / Someya, T. (Autor:in) / Miyazaki, H. (Autor:in) / Fukutani, K. (Autor:in) / Arakawa, Y. (Autor:in) / Yasui, I. (Autor:in) / Shimura, T. (Autor:in) / Kuroda, K. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    144791 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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