We investigate InGaAs-GaAs MQW structure. It has a resonant transition at near 1 /spl mu/m, which is a spectral region that is especially useful for biomedical measurements. Since the resonance is a little less than the band gap energy of GaAs substrate, we do not have to remove the substrate, which significantly simplifies the fabrication process.
Resonant photorefractive effect at near infrared in InGaAs-GaAs multiple quantum well structure
01.01.1998
142914 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Resonant Photorefractive Effect at Near Infrared in InGaAs/GaAs Multiple Quantum Well Structure
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