We investigate InGaAs-GaAs MQW structure. It has a resonant transition at near 1 /spl mu/m, which is a spectral region that is especially useful for biomedical measurements. Since the resonance is a little less than the band gap energy of GaAs substrate, we do not have to remove the substrate, which significantly simplifies the fabrication process.


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    Titel :

    Resonant photorefractive effect at near infrared in InGaAs-GaAs multiple quantum well structure


    Beteiligte:
    Iwamoto, S. (Autor:in) / Matoba, O. (Autor:in) / Shimura, T. (Autor:in) / Kuroda, K. (Autor:in)


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    142914 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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