Violet InGaN multi-quantum-well structure laser diodes (LDs) which have the shortest emission wavelength (390-440 nm) among conventional semiconductor LDs have been developed. Typical optical spectra are shown of the InGaN MQW LDs under pulsed current injection at room temperature.


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    Title :

    Present status of III-V nitride based light emitting devices


    Contributors:


    Publication date :

    1996-01-01


    Size :

    119263 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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