Violet InGaN multi-quantum-well structure laser diodes (LDs) which have the shortest emission wavelength (390-440 nm) among conventional semiconductor LDs have been developed. Typical optical spectra are shown of the InGaN MQW LDs under pulsed current injection at room temperature.
Present status of III-V nitride based light emitting devices
1996-01-01
119263 byte
Conference paper
Electronic Resource
English
Present Status of III-V Nitride Based Light Emitting Devices
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