Violet InGaN multi-quantum-well structure laser diodes (LDs) which have the shortest emission wavelength (390-440 nm) among conventional semiconductor LDs have been developed. Typical optical spectra are shown of the InGaN MQW LDs under pulsed current injection at room temperature.


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    Titel :

    Present status of III-V nitride based light emitting devices


    Beteiligte:
    Nakamura, S. (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    119263 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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