Violet InGaN multi-quantum-well structure laser diodes (LDs) which have the shortest emission wavelength (390-440 nm) among conventional semiconductor LDs have been developed. Typical optical spectra are shown of the InGaN MQW LDs under pulsed current injection at room temperature.
Present status of III-V nitride based light emitting devices
01.01.1996
119263 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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