There are numerous materials challenges involved in the production of high-efficiency III-nitride lasers and LEDs, some of which can be mitigated by epitaxy and device physics. The lack of a suitable lattice-matched substrate for epitaxy of AlInGaN films results in high dislocation densities and a large amount of residual strain in the deposited films. The role of the dislocations is not well-understood, although there is clear evidence that laser reliability is improved by reducing their density.


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    Titel :

    High-flux and high-efficiency nitride-based light-emitting devices


    Beteiligte:
    Gardner, N.F. (Autor:in) / Bhat, J. (Autor:in) / Collins, D. (Autor:in) / Cook, L. (Autor:in) / Craford, M.G. (Autor:in) / Fletcher, R.M. (Autor:in) / Grillot, P. (Autor:in) / Gotz, W.K. (Autor:in) / Kueper, M. (Autor:in) / Khare, R. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    105742 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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