There are numerous materials challenges involved in the production of high-efficiency III-nitride lasers and LEDs, some of which can be mitigated by epitaxy and device physics. The lack of a suitable lattice-matched substrate for epitaxy of AlInGaN films results in high dislocation densities and a large amount of residual strain in the deposited films. The role of the dislocations is not well-understood, although there is clear evidence that laser reliability is improved by reducing their density.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    High-flux and high-efficiency nitride-based light-emitting devices


    Contributors:
    Gardner, N.F. (author) / Bhat, J. (author) / Collins, D. (author) / Cook, L. (author) / Craford, M.G. (author) / Fletcher, R.M. (author) / Grillot, P. (author) / Gotz, W.K. (author) / Kueper, M. (author) / Khare, R. (author)


    Publication date :

    2002-01-01


    Size :

    105742 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    ThC1 High-Flux and High-Efficiency Nitride-based Light-Emitting Devices

    IEEE | British Library Conference Proceedings | 2002



    Present Status of III-V Nitride Based Light Emitting Devices

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    High-efficiency Simple Structure White Organic Light-emitting Devices Based on Rubrene Ultrathin Layer

    Xie, W. / Meng, M. / Li, C. et al. | British Library Online Contents | 2005


    High-Efficiency White Light Emission Using a Phosphorescent Sensitizer in Organic Light-Emitting Devices

    Cheng, G. / Zaho, Y. / Xie, W. et al. | British Library Online Contents | 2004