There are numerous materials challenges involved in the production of high-efficiency III-nitride lasers and LEDs, some of which can be mitigated by epitaxy and device physics. The lack of a suitable lattice-matched substrate for epitaxy of AlInGaN films results in high dislocation densities and a large amount of residual strain in the deposited films. The role of the dislocations is not well-understood, although there is clear evidence that laser reliability is improved by reducing their density.
High-flux and high-efficiency nitride-based light-emitting devices
The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society ; 2 ; 641-642 vol.2
2002-01-01
105742 byte
Conference paper
Electronic Resource
English
ThC1 High-Flux and High-Efficiency Nitride-based Light-Emitting Devices
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