Metal-semiconductor-metal photodetectors with interdigital electrode patterns are very attractive for applications in ultrafast optoelectronics and electronics such as high-speed switching and signal processing. Here, we shall demonstrate the great potential of ion-implantation for improving the bandwidth of InGaAs MSM photodetectors. The epitaxial layer sequence of the InGaAs MSM photodetector device under study is grown by LP-MOCVD on semi-insulating InP substrates.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Ultrafast ion-implanted InGaAs metal-semiconductor-metal photodetectors


    Contributors:
    Bottcher, E.H. (author) / Droge, E. (author) / Bimberg, D. (author) / Kuhl, D. (author) / Frahm, J. (author) / Venus, E.B. (author) / Portnoi, E.L. (author)


    Publication date :

    1997-01-01


    Size :

    168816 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Ultrafast Ion-Implanted InGaAs Metal-Semiconductor-Metal Photodectors

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997



    Etch enhanced low capacitance, large area thin film InGaAs metal-semiconductor-metal photodetectors

    Sang-Woo Seo, / Cheolung Cha, / Sang-Yeon Cho, et al. | IEEE | 2004


    High-speed InGaAs metal-semiconductor-metal photodetectors with improved responsivity and process yield

    Yuang, R.-H. / Chyi, J.-I. / Lin, W. et al. | British Library Online Contents | 1996