Metal-semiconductor-metal photodetectors with interdigital electrode patterns are very attractive for applications in ultrafast optoelectronics and electronics such as high-speed switching and signal processing. Here, we shall demonstrate the great potential of ion-implantation for improving the bandwidth of InGaAs MSM photodetectors. The epitaxial layer sequence of the InGaAs MSM photodetector device under study is grown by LP-MOCVD on semi-insulating InP substrates.
Ultrafast ion-implanted InGaAs metal-semiconductor-metal photodetectors
01.01.1997
168816 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Ultrafast Ion-Implanted InGaAs Metal-Semiconductor-Metal Photodectors
British Library Conference Proceedings | 1997
|British Library Online Contents | 1996
|