Ge/SiGe multiple quantum wells (MQWs) are grown on silicon substrates using ultra-high vacuum chemical vapor deposition (UHVCVD) technique. The quantum-confined Stark effect (QCSE) is clearly observed in our MQWs structure.


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    Title :

    UHVCVD growth of Ge/SiGe multiple quantum wells for electro-absorption modulation


    Contributors:
    Hongwei Zhao, (author) / Weixuan Hu, (author) / Chunlai Xue, (author) / Buwen Cheng, (author) / Qiming Wang, (author)


    Publication date :

    2011-09-01


    Size :

    703261 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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