Terahertz-optical mixing is studied in biased GaAs quantum wells for voltage-controlled wavelength conversion. The mixing produces sidebands, which appear at /spl omega//sub sideband/=/spl omega//sub optical/+nc/spl omega//sub Teraher/ /sub tz/, where n=/spl plusmn/1, /spl plusmn/2,... sidebands are strong when the optical beam or the sum of the two laser beam excite resonances of the quantum well. Their intensity is found to depend strongly on the electric bias and on terahertz frequency. The n=/spl plusmn/1 sideband intensity is zero when the sample is unbiased and increases significantly with bias. The sideband is strong when the terahertz laser frequency is tuned in resonance with an intersubband transition and also at low terahertz frequencies. At low frequencies the system is equivalent to quantum well modulators. We show how the response extends into the terahertz range.


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    Title :

    Terahertz electro-optic modulation in biased GaAs quantum wells


    Contributors:


    Publication date :

    2004-01-01


    Size :

    191241 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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