We observe strong electroabsorption in Ge quantum wells with SiGe barriers, grown on Si substrates, with performance comparable to III-V materials, and promising compact, low-power, high-speed modulators compatible with Si CMOS electronics.
Quantum-confined Stark effect electroabsorption in Ge/SiGe quantum wells on silicon substrates
2005-01-01
185106 byte
Conference paper
Electronic Resource
English
Quantum-Confined Stark Effect Electroabsorption in Ge/SiGe Quantum Wells on Silicon Substrates
British Library Conference Proceedings | 2005
|British Library Online Contents | 2010
|Silicon germanium device exhibits quantum-confined Stark effect
British Library Online Contents | 2005
Electroabsorption In Extremely Shallow Quantum Wells
IEEE | 1990
|