We observe strong electroabsorption in Ge quantum wells with SiGe barriers, grown on Si substrates, with performance comparable to III-V materials, and promising compact, low-power, high-speed modulators compatible with Si CMOS electronics.


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    Title :

    Quantum-confined Stark effect electroabsorption in Ge/SiGe quantum wells on silicon substrates


    Contributors:
    Yu-Hsuan Kuo, (author) / Yongkyu Lee, (author) / Shen Ren, (author) / Yangsi Ge, (author) / Miller, D.A.B. (author) / Harris, J.S. (author)


    Publication date :

    2005-01-01


    Size :

    185106 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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