We observe strong electroabsorption in Ge quantum wells with SiGe barriers, grown on Si substrates, with performance comparable to III-V materials, and promising compact, low-power, high-speed modulators compatible with Si CMOS electronics.
Quantum-confined Stark effect electroabsorption in Ge/SiGe quantum wells on silicon substrates
2005-01-01
185106 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Quantum-Confined Stark Effect Electroabsorption in Ge/SiGe Quantum Wells on Silicon Substrates
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