Field effect transistors (FET's) with a nanometer gate length can act as detectors for terahertz radiation using the plasma wave instability predicted by Dyakonov and Shur. We present the nonresonant detection observed at room temperature for FETs with 30 nm gate length. We discuss possibility to observe a voltage tunable resonant detection.


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    Title :

    Non-resonant detection of terahertz radiation by nanometer field effect transistors


    Contributors:
    Meziani, Y.M. (author) / Lusakowski, J. (author) / Dyakonova, N. (author) / Knap, W. (author) / Seliuta, D. (author) / Sirmulis, E. (author) / Devenson, J. (author) / Valusis, G. (author) / Boeuf, F. (author) / Skotnicki, T. (author)


    Publication date :

    2005-01-01


    Size :

    1645948 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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