Generation of THz radiation in nanometer gate length InAlAs/InGaAs and AlGaN/GaN high mobility transistors is observed at room temperature. Spectral analysis of the emitted radiation is presented.


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    Title :

    Room-temperature terahertz emission from nanometer field-effect transistors


    Contributors:
    Dyakonova, N. (author) / El Fatimy, A. (author) / Lusakowskil, J. (author) / Knap, W. (author) / Dyakonov, M.I. (author) / Poisson, M.-A. (author) / Morvan, E. (author) / Bollaert, S. (author) / Shchepetov, A. (author) / Roelens, Y. (author)


    Publication date :

    2006-09-01


    Size :

    1129389 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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