Generation of THz radiation in nanometer gate length InAlAs/InGaAs and AlGaN/GaN high mobility transistors is observed at room temperature. Spectral analysis of the emitted radiation is presented.
Room-temperature terahertz emission from nanometer field-effect transistors
01.09.2006
1129389 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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