Field effect transistors (FET's) with a nanometer gate length can act as detectors for terahertz radiation using the plasma wave instability predicted by Dyakonov and Shur. We present the nonresonant detection observed at room temperature for FETs with 30 nm gate length. We discuss possibility to observe a voltage tunable resonant detection.
Non-resonant detection of terahertz radiation by nanometer field effect transistors
01.01.2005
1645948 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
TB2-7 Non Resonant Detection Of Terahertz Radiation By Nanometer Field Effect Transistors
British Library Conference Proceedings | 2005
|British Library Conference Proceedings | 2005
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