Field effect transistors (FET's) with a nanometer gate length can act as detectors for terahertz radiation using the plasma wave instability predicted by Dyakonov and Shur. We present the nonresonant detection observed at room temperature for FETs with 30 nm gate length. We discuss possibility to observe a voltage tunable resonant detection.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Non-resonant detection of terahertz radiation by nanometer field effect transistors


    Beteiligte:
    Meziani, Y.M. (Autor:in) / Lusakowski, J. (Autor:in) / Dyakonova, N. (Autor:in) / Knap, W. (Autor:in) / Seliuta, D. (Autor:in) / Sirmulis, E. (Autor:in) / Devenson, J. (Autor:in) / Valusis, G. (Autor:in) / Boeuf, F. (Autor:in) / Skotnicki, T. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    1645948 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    TB2-7 Non Resonant Detection Of Terahertz Radiation By Nanometer Field Effect Transistors

    Meziani, Y. M. / Lusakowski, J. / Dyakonova, N. et al. | British Library Conference Proceedings | 2005


    Room-temperature terahertz emission from nanometer field-effect transistors

    Dyakonova, N. / El Fatimy, A. / Lusakowskil, J. et al. | IEEE | 2006



    Excitation of Gated and Ungated Plasmons and Generation of Terahertz Radiation in Nanometer-Gate Field-Effect Transistor

    Polischuk, O. V. / Popov, V. V. / Shur, M. S. et al. | British Library Conference Proceedings | 2005